Clean room

The clean room of the IPHT is used in cooperation with the IAP of the Friedrich Schiller University Jena. Its total area is 600 m² of which about a half is being used as clean room laboratories of ISO-class 4, 5 and 6, respectively. The remaining part is maintenance and installation area of ISO-class 7(ISO-14644-1).

The following processes and techniques for microfabrication can be offered to customers:

Design

• CAD system from “Mentor Graphics”, including design rule check.
• Suited for optical pattern generator and e-beam writer.

Photolithography

• Optical pattern generator GCA MANN3600 for mask making: resolution 2 µm
• EVG 620 and AL6-2 mask aligner: resolution 1.5 µm, backside alignment, up to 6” wafers
• GCA Series 8500 i-line wafer stepper: resolution 0.7 µm, up to 6” wafers

Electron beam lithography

• Vistec ¹ SB350 OS (shared in use with IAP and IOF Fraunhofer Institut, site: clean room IOF): variable shaped beam, resolution: 65 nm node.
• Vistec ¹ LION LV1: Gaussian beam, resolution: 25 nm.

(¹ Vistec Electron Beam GmbH, formerly Leica Microsystems Lithography GmbH)

Thin film deposition

• UHV multi-chamber-system, 3 processing chambers with wafer handling system
  UHV chamber, Base pressure 8e-10 mbar, three 6’’-DC magnetron sources, wafer diameter up to 4’’. Nb, Al, Ta
  Plasma chamber, Base pressure 5e-8 mbar , low temperature PECVD deposition, 6’’-ECR-plasma source, wafer diameter up to 4’’, SiO2
  HV chamber, Base pressure 5e-8 mbar , substrate heating, UV-light source.
• Cryopumped sputtering system SCM 650: Base pressure 5e-8 mbar, four 6’’ HF/DC magnetron sources, wafer diameter up to 4’’. Nb, Al, Mo, AuPd
• Evaporation system B55 Base pressure 1e-7 mbar, 6 kW electron beam evaporator with four crucibles, 1 resistive evaporation source, 3 cm ion-beam source, wafer diameter up to 4’’. Al, Ti, Au, Ag, MgO, SiO
• Ion beam sputter deposition system: 12 cm diameter 13.56 MHz filament less source, substrate holder cooling down to 100 K, substrate diameter up to 6’’. C, Ti, Nb, NiCr, Cr, Cu., Si, Au
• PECVD system Plasmos High temperature PECVD deposition process, wafer diameter up to 6’’. SiO2, Si3N4

Pattern transfer

• Reactive Ion Beam Etching 12 cm diameter 13.56 MHz filament less source, substrate holder cooling down to 100 K, substrate diameter up to 6’’, Ar, O2
• Reactive Ion Etching (RIE): ECR source, substrate holder cooling down to 100 K, substrate diameter up to 6’’. CF4, SF6, CHF3, O2, Ar.
• RIE: Parallel-plate-reactor 13.56 MHz source, substrate holder cooling down to 100 K, substrate diameter up to 6’’, Ar, O2, SF6, CF4
• RIE: Parallel-plate-reactor, 13.56 Mhz source O2, Ar, CF4, CHF3, SF6
• Wet chemical etching processes metal and dielectric films, silicon deep anisotropic etching
• Lift-off

Characterization

• SEM JEOL 6700F with X-ray element analysis EDAX, wafer diameter up to 6’’.
• Profilometers: Dektak 8, wafer diameter up to 6’’.
• Spectralellipsometer: Micro Pack SpecEl-2000VIS.
• Leica CD-2, mask metrology