Thin Film Deposition Equipment

• PECVD for silicon 5x5 cm²
  Doping by phosphine or diborane
  Irradiation of growing layer by argon ion laser
  or excimer laser for laser crystallization

• Electron beam evaporation for silicon 10x10 cm²
  B or P doping sources
  Irradiation of growing layer by excimer laser for laser crystallization
  Deposition rate up to 700 nm/min

• Thermal CVD for silicon nanowire
• Pulsed laser deposition
• Metal evaporation
• Hydrogen passivation by remote microwave plasma

Lasers

• Argon ion laser
  cw 514 nm
• Diode laser
  cw 805 nm, 750 W
• Excimer lasers
  93 nm, 248 nm, 351 nm
• Nd:YAG-Laser
  8 ns pulse duration, 1064 nm, SHG, THG, FHG
• fs-Laser
  Ti:sapphire oscillator 700-1000 nm, 76 MHz, 1.4 W, 100 fs
  with amplifier 785 nm, 1kHz, 2 mJ pulse energy, 150 fs
  each with SHG, THG

Diagnostik

• Optical microscopy including DIC
• Sun simulator
• LBIC (Laser Beam Induced Current)
  for spatially resolved diagnostics of solar cells
  by 4 different wavelengths
• Mechanical profiler

Deutsch | English

Head
PD Dr. Fritz Falk
Telefon +49 (0) 3641 · 206 438
Telefax +49 (0) 3641 · 206 499