Research Group Laser Modification Competence
The rather ample collection of lasers in the department is used for laser modification of thin films and laser micromachining.
Laser crystallization of silicon and other semiconductor thin films:
- Excimer laser crystallization for Si or GaAs nanocrystalline films
- cw diode laser crystallization for Si multicrystalline films
Writing of Bragg gratings into optical fibers by a fs laser using the basic wavelength of 780 nm or second or third harmonic. No sensitizers in the fibers are required since the high intensities even in silica leads to nonlinear absorption followed by material modification.
- Holes drilled into WC hard metal using a fs laser
Opening windows in silicon nitride or silica layers on top of wafer solar cells
Excimer or fs lasers are applied
Drilling of holes into hard metals (WC) by fs laser irradiation
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Contact
Head
PD Dr. Fritz Falk
Telefon +49 (0) 3641 · 206 438
Telefax +49 (0) 3641 · 206 499
